High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate
| Autor: | Wang, Fei, Chen, G.Q., Wang, Wei, Zhang, M.H., He, Shi, Shao, Guoqing, Wang, Y.F., Hu, Wenbo, Wang, Hongxing |
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| Zdroj: | In Diamond & Related Materials April 2023 134 |
| Databáze: | ScienceDirect |
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