Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110)
| Autor: | Sambonsuge, Shota, Jiao, Sai, Nagasawa, Hiroyuki, Fukidome, Hirokazu, Filimonov, Sergey N., Suemitsu, Maki |
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| Zdroj: | In Diamond & Related Materials August 2016 67:51-53 |
| Databáze: | ScienceDirect |
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