Simulation study on 4H–SiC power devices with high-k dielectric FP terminations
| Autor: | Song, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan |
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| Zdroj: | In Diamond & Related Materials February 2012 22:42-47 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Song, Qing-Wen, Zhang, Yu-Ming, Zhang, Yi-Men, Tang, Xiao-Yan |
|---|---|
| Zdroj: | In Diamond & Related Materials February 2012 22:42-47 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect