MOCVD doping technology for phosphorus incorporation in diamond: Influence of the growth temperature on the electrical properties

Autor: Kociniewski, T., Pinault, M.-A., Barjon, J., Jomard, F., Chevallier, J., Saguy, C.
Zdroj: In Diamond & Related Materials 2007 16(4):815-818
Databáze: ScienceDirect