Improvement of 4H–SiC selective epitaxial growth by VLS mechanism using Al and Ge-based melts
| Autor: | Soueidan, M., Ferro, G., Jacquier, C., Godignon, P., Pezoldt, J., Lazar, M., Nsouli, B., Monteil, Y. |
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| Zdroj: | In Diamond & Related Materials 2007 16(1):37-45 |
| Databáze: | ScienceDirect |
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