The working principle, structural design and material development of ferroelectric field-effect transistors and random-access memories
| Autor: | Chen, Yanning, Wang, Senlin, Liu, Fang, Wu, Bo, Deng, Yongfeng, Tao, Ran, Wu, Yongyu, Gao, Dawei |
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| Zdroj: | In Journal of Alloys and Compounds 5 January 2025 1010 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect