Bipolar resistive switching behavior of bilayer β-Ga2O3/WO3 thin film memristor device
| Autor: | Alam, Mir Waqas, Jamir, Ayangla, Longkumer, Bendangchila, Souayeh, Basma, Sadaf, Shima, Moirangthem, Borish |
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| Zdroj: | In Journal of Alloys and Compounds 5 January 2025 1010 |
| Databáze: | ScienceDirect |
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