Interface-controlled growth-dominated crystallization enables ultralow resistance drift in GeTe/Sb2Te3 phase-change heterostructure thin films
Autor: | Wu, Tong, Wang, Guoxiang, Lotnyk, Andriy, He, Anyi, Shen, Xiang, Chen, Yimin |
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Zdroj: | In Journal of Alloys and Compounds 15 August 2024 995 |
Databáze: | ScienceDirect |
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