Interface-controlled growth-dominated crystallization enables ultralow resistance drift in GeTe/Sb2Te3 phase-change heterostructure thin films

Autor: Wu, Tong, Wang, Guoxiang, Lotnyk, Andriy, He, Anyi, Shen, Xiang, Chen, Yimin
Zdroj: In Journal of Alloys and Compounds 15 August 2024 995
Databáze: ScienceDirect