High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
| Autor: | Zhang, Qihao, Liu, Jiangwei, Tu, Chunming, Zhai, Dongyuan, He, Min, Lu, Jiwu |
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| Zdroj: | In Journal of Alloys and Compounds 5 April 2023 939 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect