Diode-like rectification characteristics of BiFeO3-based /Zn1-xNixFe2O4 bilayered films for application of ferroelectric field effect transistors

Autor: Tan, Guoqiang, Ren, Xixi, Liu, Yun, Guo, Meiyou, Lv, Long, Li, Jincheng, Xue, Mintao, Ren, Huijun, Xia, Ao, Liu, Wenlong
Zdroj: In Journal of Alloys and Compounds 15 January 2021 851
Databáze: ScienceDirect