Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
| Autor: | Polyakov, A.Y., Haller, C., Butté, R., Smirnov, N.B., Alexanyan, L.A., Kochkova, A.I., Shikoh, S.A., Shchemerov, I.V., Chernykh, A.V., Lagov, P.B., Pavlov, Yu S., Carlin, J.-F., Mosca, M., Grandjean, N., Pearton, S.J. |
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| Zdroj: | In Journal of Alloys and Compounds 10 December 2020 845 |
| Databáze: | ScienceDirect |
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