Utilizing compliance current level for controllability of resistive switching in nickel oxide thin films for resistive random-access memory
| Autor: | Tsai, Tsung-Ming, Lin, Chun-Chu, Chen, Wen-Chung, Wu, Cheng-Hsien, Yang, Chih-Cheng, Tan, Yung-Fang, Wu, Pei-Yu, Huang, Hui-Chun, Zhang, Yong-Ci, Sun, Li-Chuan, Chou, Sheng-Yao |
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| Zdroj: | In Journal of Alloys and Compounds 15 June 2020 826 |
| Databáze: | ScienceDirect |
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