Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates
| Autor: | Liu, Xinke, Wang, Hao-Yu, Chiu, Hsien-Chin, Chen, Yuxuan, Li, Dabing, Huang, Chong-Rong, Kao, Hsuan-Ling, Kuo, Hao-Chung, Huang Chen, Sung-Wen |
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| Zdroj: | In Journal of Alloys and Compounds 25 January 2020 814 |
| Databáze: | ScienceDirect |
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