Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices

Autor: Djeghlouf, Asmaa, Hamri, Djillali, Teffahi, Abdelkader, Saidane, Abdelkader, Al Mashary, Faisal S., Al Huwayz, Maryam M., Henini, Mohamed, Orak, Ikram, Albadri, Abdulrahman M., Alyamani, Ahmed Y.
Zdroj: In Journal of Alloys and Compounds 15 February 2019 775:202-213
Databáze: ScienceDirect