Suppression of Ge-based defects and auto-doping of p-type epitaxial GaAs by employing Al0.3Ga0.7As bi-layer buffer
| Autor: | Dalapati, G.K., Guhathakurata, S., Das, A., Mahata, C., Chakraborty, S., Bhunia, S., Seng, H.L., Chattopadhyay, S., Bera, L.K., Tripathy, S. |
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| Zdroj: | In Journal of Alloys and Compounds 15 October 2018 765:994-1002 |
| Databáze: | ScienceDirect |
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