Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure
| Autor: | Chandra Sekhar, M., Nanda Kumar Reddy, Nallabala, Akkera, Harish Sharma, Purusottam Reddy, B., Rajendar, V., Uthanna, S., Park, Si-Hyun |
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| Zdroj: | In Journal of Alloys and Compounds 25 September 2017 718:104-111 |
| Databáze: | ScienceDirect |
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