Epitaxial growth of high In-content In0.41Ga0.59N/GaN heterostructure on (11–20) Al2O3 substrate

Autor: Krishna, Shibin a, b, Aggarwal, Neha a, b, Mishra, Monu a, b, Maurya, K.K. c, Kaur, Mandeep d, Sehgal, Geetanjali c, Singh, Sukhveer c, Dilawar, Nita e, Gupta, Bipin Kumar f, Gupta, Govind a, b, ∗
Zdroj: In Journal of Alloys and Compounds 15 February 2016 658:470-475
Databáze: ScienceDirect
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