Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing
| Autor: | Ilahi, B., Nasr, O., Paquette, B., Hadj Alouane, M.H., Chauvin, N., Salem, B., Sfaxi, L., Bru-Chevalier, C., Morris, D., Ares, R., Aimez, V., Maaref, H. |
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| Zdroj: | In Journal of Alloys and Compounds 25 January 2016 656:132-137 |
| Databáze: | ScienceDirect |
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