Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensities
| Autor: | Omprakash, M., Arivanandhan, M., Arun Kumar, R., Morii, H., Aoki, T., Koyama, T., Momose, Y., Ikeda, H., Tatsuoka, H., Okano, Y., Ozawa, T., Moorthy Babu, S., Inatomi, Y., Hayakawa, Y. |
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| Zdroj: | In Journal of Alloys and Compounds 25 March 2014 590:96-101 |
| Databáze: | ScienceDirect |
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