Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si
| Autor: | Polyakov, A.Y., Smirnov, N.B., Ha, Min-Woo, Hahn, Cheol-Koo, Kozhukhova, E.A., Govorkov, A.V., Ryzhuk, R.V., Kargin, N.I., Cho, Han-Su, Lee, In-Hwan |
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| Zdroj: | In Journal of Alloys and Compounds 25 October 2013 575:17-23 |
| Databáze: | ScienceDirect |
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