Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy
| Autor: | Bouzazi, Boussairi, Kojima, Nobuaki, Ohshita, Yoshio, Yamaguchi, Masafumi |
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| Zdroj: | In Journal of Alloys and Compounds 5 March 2013 552:469-474 |
| Databáze: | ScienceDirect |
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