Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

Autor: Li, M.X., Miao, J., Wu, S.Z., Liu, Q.L., Jiang, Y., Yang, H., Qiao, L.J.
Zdroj: In Journal of Alloys and Compounds 25 January 2013 548:1-6
Databáze: ScienceDirect
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