Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O 2
| Autor: | Chang, P.C., Su, Y.K., Lee, K.J., Yu, C.L., Chang, S.J., Liu, C.H. |
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| Zdroj: | In Journal of Alloys and Compounds 2010 504 Supplement 1:S429-S431 |
| Databáze: | ScienceDirect |
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