SiC-based FET for detection of NO x and O 2 using InSnO x as a gate material
| Autor: | Ali, M., Cimalla, V., Lebedev, V., Stauden, Th., Ecke, G., Tilak, V., Sandvik, P., Ambacher, O. |
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| Zdroj: | In Sensors & Actuators: B. Chemical 2007 122(1):182-186 |
| Databáze: | ScienceDirect |
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