Influence of high-k La2O3 interfacial oxide layer on the performance of GaN based Schottky barrier ultraviolet-B and A photodetection sensors
| Autor: | Nanda Kumar Reddy, Nallabala, Reddy, K Vamsidhar, Kaleemulla, S., Sharma, Shivani, Manjunath, V., Kumar, Suresh, Krishana, G. Gopi, Rosaiah, P., Ravi, N., Kummara, Venkata Krishnaiah, Kushvaha, Sunil Singh, Minnam Reddy, Vasudeva Reddy, Usmani, Yusuf Siraj |
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| Zdroj: | In Optical Materials January 2025 158 |
| Databáze: | ScienceDirect |
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