Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Autor: Razeen, Ahmed S., Tang, Eric X., Yuan, Gao, Ong, Jesper, Radhakrishnan, K., Tripathy, Sudhiranjan
Zdroj: In Optical Materials April 2024 150
Databáze: ScienceDirect