Influence of the GaAs crystals diffusion in the shift towards low energies in the photoluminescence emission band of the GaN/GaNbuffer/GaAs structure

Autor: Gastellóu, Erick, Morales, Crisoforo, García, Godofredo, García, Rafael, Hirata, Gustavo A., Herrera, Ana M., Galeazzi, Reina, Rosendo, Enrique, Díaz, Tomas
Zdroj: In Optical Materials February 2019 88:277-281
Databáze: ScienceDirect