Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Autor:	Wang, Wantang, Zhang, Baoguo *, Shi, Yunhui, Ma, Tengda, Zhou, Jiakai, Wang, Ru, Wang, Hanxiao, Zeng, Nengyuan
Zdroj:	In Journal of Materials Processing Tech. September 2021 295
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect