Gettering efficiencies of polysilicon-, stacking fault- and He-implanted backsides for Cu and Ni
Autor: | Hoelzl, R *, Range, K.-J, Fabry, L, Hage, J, Raineri, V |
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Zdroj: | In Materials Science & Engineering B 2000 73(1):95-98 |
Databáze: | ScienceDirect |
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