The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD

Autor: Papaioannou, V. *, Möller, H., Rapp, M., Vogelmeier, L., Eickhoff, M., Krötz, G., Stoemenos, J.
Zdroj: In Materials Science & Engineering B 1999 61:539-543
Databáze: ScienceDirect