Line-tunneling based GaP/Si heterostructure vertical gate-all-around tunnel FET for enhanced electrical performance
| Autor: | Bokka, Jagadeesh Babu, Doddi, Bhaskara Venkata Jagannadham |
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| Zdroj: | In Materials Science & Engineering B February 2025 312 |
| Databáze: | ScienceDirect |
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