Effect of doping on transport properties of InSb epilayers grown by MOCVD and MBE

Autor: Gunes, M., Aydın, M., Donmez, O., Gumus, C., Erol, A., Marroquin, J.F.R., Felix, J.F., Yoshikawa, A., Geka, H., Kuze, N., Henini, M.
Zdroj: In Materials Science & Engineering B July 2024 305
Databáze: ScienceDirect