Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate

Autor: Wan Khai, Loke, Yue, Wang, Hanlin, Xie, Hui Teng, Tan, Shuyu, Bao, Kwang Hong, Lee, Lina, Khaw, Lee Eng Kian, Kenneth, Chuan Seng, Tan, Geok Ing, Ng, Fitzgerald, Eugene A., Soon Fatt, Yoon
Zdroj: In Materials Science & Engineering B October 2023 296
Databáze: ScienceDirect
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