Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
| Autor: | Sharma, Megha, Kumar, Bhavya, Chaujar, Rishu |
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| Zdroj: | In Materials Science & Engineering B April 2023 290 |
| Databáze: | ScienceDirect |
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