Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode
Autor: | Humood, Khaled, Saylan, Sueda, Abi Jaoude, Maguy, Mohammad, Baker, Ravaux, Florent |
---|---|
Zdroj: | In Materials Science & Engineering B September 2021 271 |
Databáze: | ScienceDirect |
Externí odkaz: |