Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode

Autor: Humood, Khaled, Saylan, Sueda, Abi Jaoude, Maguy, Mohammad, Baker, Ravaux, Florent
Zdroj: In Materials Science & Engineering B September 2021 271
Databáze: ScienceDirect