Comparison of Fe and Si doping of GaN: An EXAFS and Raman study

Autor: Katsikini, M., Pinakidou, F., Arvanitidis, J., Paloura, E.C., Ves, S., Komninou, Ph., Bougrioua, Z., Iliopoulos, E., Moustakas, T.D.
Zdroj: In Materials Science & Engineering B 2011 176(9):723-726
Databáze: ScienceDirect