High charge storage of poly-Si thin film nonvolatile memory devices with oxide–silicon–oxynitride stack structures

Autor: Jung, Sungwook, Jang, Kyungsoo, Lee, Youn-Jung, Jin, Zhenghai, Yi, Junsin
Zdroj: In Materials Science & Engineering B 2010 167(3):167-170
Databáze: ScienceDirect