High charge storage of poly-Si thin film nonvolatile memory devices with oxide–silicon–oxynitride stack structures
Autor: | Jung, Sungwook, Jang, Kyungsoo, Lee, Youn-Jung, Jin, Zhenghai, Yi, Junsin |
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Zdroj: | In Materials Science & Engineering B 2010 167(3):167-170 |
Databáze: | ScienceDirect |
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