Laser annealing of the Si layers in Si/SiO 2 multiple quantum wells

Autor: Arguirov, T., Mchedlidze, T., Kouteva-Arguirova, S., Kittler, M., Rölver, R., Berghoff, B., Bätzner, D., Spangenberg, B.
Zdroj: In Materials Science & Engineering B 2009 159:57-60
Databáze: ScienceDirect