Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si
| Autor: | Vines, L., Monakhov, E.V., Jensen, J., Kuznetsov, A.Yu., Svensson, B.G. |
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| Zdroj: | In Materials Science & Engineering B 2009 159:177-181 |
| Databáze: | ScienceDirect |
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