High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers
| Autor: | Radamson, H.H., Kolahdouz, M., Ghandi, R., Ostling, M. |
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| Zdroj: | In Materials Science & Engineering B 2008 154:106-109 |
| Databáze: | ScienceDirect |
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