Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
| Autor: | Soueidan, M. a, b, ⁎, Ferro, G. a, Nsouli, B. b, Cauwet, F. a, Dazord, J. a, Younes, G. c, Monteil, Y. a |
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| Zdroj: | In Materials Science & Engineering B 2006 130(1):66-72 |
| Databáze: | ScienceDirect |
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