Characteristics of silicon p–n junction formed by ion implantation with in situ ultrasound treatment
| Autor: | Melnik, V.P., Olikh, Y.M., Popov, V.G., Romanyuk, B.M., Goltvyanskii, Y.V., Evtukh, A.A. |
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| Zdroj: | In Materials Science & Engineering B 2005 124:327-330 |
| Databáze: | ScienceDirect |
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