Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm
| Autor: | Chang, S.J. *, Yu, H.C., Su, Y.K., Chen, I.L., Lee, T.D., Lu, C.M., Chiou, C.H., Lee, Z.H., Yang, H.P., Sung, C.P. |
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| Zdroj: | In Materials Science & Engineering B 2005 121(1):60-63 |
| Databáze: | ScienceDirect |
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