Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Autor: Kohli, P. *, Chakravarthi, S., Jain, Amitabh, Bu, H., Mehrotra, M., Dunham, S.T., Banerjee, S.K.
Zdroj: In Materials Science & Engineering B 2004 114:390-396
Databáze: ScienceDirect