Physical properties of ALD-Al 2O 3 in a DRAM-capacitor equivalent structure comparing interfaces and oxygen precursors
Autor: | Jakschik, S, Schroeder, U, Hecht, T, Dollinger, G, Bergmaier, A, Bartha, J.W |
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Zdroj: | In Materials Science & Engineering B 2004 107(3):251-254 |
Databáze: | ScienceDirect |
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