Physical properties of ALD-Al 2O 3 in a DRAM-capacitor equivalent structure comparing interfaces and oxygen precursors

Autor: Jakschik, S, Schroeder, U, Hecht, T, Dollinger, G, Bergmaier, A, Bartha, J.W
Zdroj: In Materials Science & Engineering B 2004 107(3):251-254
Databáze: ScienceDirect