Raman scattering, photoluminescence, and X-ray diffraction studies of GaN layers grown on misoriented sapphire substrates

Autor: Benyoucef, M *, Kuball, M, Koleske, D.D, Wickenden, A.E, Henry, R.L, Fatemi, M, Twigg, M.E
Zdroj: In Materials Science & Engineering B 2002 93(1):15-18
Databáze: ScienceDirect