Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC
Autor: | Strel'chuk, A.M. *, Savkina, N.S., Kuznetsov, A.N., Lebedev, A.A., Tregubova, A.S. |
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Zdroj: | In Materials Science & Engineering B 2002 91:321-324 |
Databáze: | ScienceDirect |
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