Characterization of p–n structures grown by sublimation heteroepitaxy of 3C-SiC on 6H-SiC

Autor: Strel'chuk, A.M. *, Savkina, N.S., Kuznetsov, A.N., Lebedev, A.A., Tregubova, A.S.
Zdroj: In Materials Science & Engineering B 2002 91:321-324
Databáze: ScienceDirect