Epitaxial growth of germanium dots on silicon (001) surface covered by a very thin dielectric layer

Autor: Derivaz, M, Noé, P, Rouviére, J.L, Buttard, D, Sotta, D, Gentil, P, Barski, A *
Zdroj: In Materials Science & Engineering B 2002 89(1):191-195
Databáze: ScienceDirect