Structural and electrical properties of MOCVD-cobalt silicide on p-Si 0.83Ge 0.17/Si(001)

Autor: Shin, D.O., Ahn, Y.S., Ban, S.H., Lee, N.-E. *, Ahn, B.T., Kim, S.H., Shim, K.-H., Kang, J.-Y.
Zdroj: In Materials Science & Engineering B 2002 89(1):279-283
Databáze: ScienceDirect